Depleted Silicon Surface Barrier Detectors for Research

ORTEC provides a wide range of depleted silicon surface barrier detectors to meet the needs of many research applications.

* All resolution measurements are made and guaranteed at 21 ±1 °C.

** Measured with natural alpha particles of 5.486 MeV.

 

.	A series	B-series
main application	High resolution charged particle spectroscopy (Nuclear Physics and Chemistry-Space Physics)	Particle identification, detector telescopes (Nuclear Physics and Chemical-Space Physics)
detector type	Partially depleted silicon surface barrier	Fully depleted silicon surface barrier
Starting material	Yeah	Yeah
Active Area Range (mm 2 )	25–450	50–450
Active Thickness Range (µm)	1000–2000	150–2000
Guaranteed operating temperature range*	+25°C to –30°C	+25°C a  –30°C
diode structure	Gold — Partial aluminum depletion of N-type silicon	Gold — Total depletion of N-type silicon aluminum
Rated Equivalent** Windows Stopping Power	Entrance 800 Å Yes	Entry 800 Å Yes Exit 2250 Å Yes

 

.	C-series	D-series
main application	Backscatter from a collimated source or target-beam angular correlation measurements (Nuclear Physics)	Time of flight measurements with heavy ions ​​(Nuclear Physics)
detector type	Partially depleted silicon surface annular barrier	Fully depleted silicon flat surface barrier
Starting material	Yeah	Yeah
Active Area Range (mm 2 )	50–450	10–450
Active Thickness Range (µm)	100–1000	15–100
Guaranteed operating temperature range*	25°C to –30°C	10°C to 25°C
diode structure	Gold — Partial aluminum depletion of N-type silicon	Gold—N-type silicon aluminum total depletion planar
Rated Equivalent** Windows Stopping Power	Entrance 800 Å Yes Exit 2250 Å Yes	Entrance 800 Å Yes Exit 2250 Å Yes

 

.	F-series	R-series
main application	Espectroscopia de iones pesados ​​(Física nuclear)	Charged particle spectroscopy operable in air and ambient light
detector type	Partially depleted silicon surface barrier	Partially depleted reinforced silicon
Starting material	Yeah	Yeah
Active Area Range (mm 2 )	100–900	50–2000
Active Thickness Range (µm)	≥60	100–500
Guaranteed operating temperature range*	+25°C to –30°C	+25°C to –30°C
diode structure	Gold — Type N Si Aluminum Partial depletion High field strength	Aluminum: partial gold depletion of P-type silicon
Rated Equivalent** Windows Stopping Power	Entrance 800 Å Yes	Entrance 2300 Å Yes